Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process

Effect of GeCl4/SiCl4 flow ratio on germanium incorporation in MCVD process

Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX....

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Bibliographic Details
Main Authors: Mat Sharif, Khairul Anuar, Zulkifli, Mohd Imran, Muhamad Yassin, Shahrin Zen, Tamchek, Nizam, Aljamimi, Salah Mohammed, Yusoff, A., Mohd Amin, Yusoff, S. A., Siti Shafiqah, Abdul Rashid, Hairul Azhar
Format: Conference or Workshop Item
Language:English
Published: IEEE 2013
Online Access:http://psasir.upm.edu.my/id/eprint/69175/1/Effect%20of%20GeCl4SiCl4%20flow%20ratio%20on%20germanium%20incorporation%20in%20MCVD%20process.pdf
http://psasir.upm.edu.my/id/eprint/69175/
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Institution: Universiti Putra Malaysia
Language: English
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Summary:Germanium and Silica co-deposition in MCVD process is studied with varying the flow ratio of GeCl4/SiCl4 at high temperature without phosphorus. The range of ratio is from 0.1 to 0.6 with temperature deposition 2100°C. The incorporation of germanium in silica matrix is deduced from the EPMA SEM-EDX. The experimental result is compared to theory such as thickness deposited layer and mole fraction of germanium in silica.

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