A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.

A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.

High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well a...

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Main Authors: Y, C.Lee, Z., Hassan, F., K. Yam, Abdullah, M. J., Ibrahim, K.
Format: Monograph
Published: Universiti Sains Malaysia 2000
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/10768/
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Institution: Universiti Sains Malaysia
id my.usm.eprints.10768
record_format eprints
spelling my.usm.eprints.10768 http://eprints.usm.my/10768/ A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. Y, C.Lee Z., Hassan F., K. Yam Abdullah, M. J. Ibrahim, K. QC1-999 Physics High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon. Universiti Sains Malaysia 2000 Monograph NonPeerReviewed Y, C.Lee and Z., Hassan and F., K. Yam and Abdullah, M. J. and Ibrahim, K. (2000) A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon. Working Paper. Universiti Sains Malaysia .
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Y, C.Lee
Z., Hassan
F., K. Yam
Abdullah, M. J.
Ibrahim, K.
A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
description High quality Gan films are usually produced at high growth temperatures (> 1OOO°C) with the use of substrates such as sapphire (Ah03) or silicon carbide (SiC).Therefore, for a low production cost purpose, there has been a growing interest in producing lower growth temperatures Gan films as well as Gan based devices with low cost substrates such as silicon.
format Monograph
author Y, C.Lee
Z., Hassan
F., K. Yam
Abdullah, M. J.
Ibrahim, K.
author_facet Y, C.Lee
Z., Hassan
F., K. Yam
Abdullah, M. J.
Ibrahim, K.
author_sort Y, C.Lee
title A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
title_short A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
title_full A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
title_fullStr A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
title_full_unstemmed A comparative study of the electrical characteristics of metal-semiconductor-metal (MSM) photodiodes based on gan grown on silicon.
title_sort comparative study of the electrical characteristics of metal-semiconductor-metal (msm) photodiodes based on gan grown on silicon.
publisher Universiti Sains Malaysia
publishDate 2000
url http://eprints.usm.my/10768/
_version_ 1643701620444233728

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