Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE).
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| Format: | Conference or Workshop Item |
| Language: | English |
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2007
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| Online Access: | http://eprints.usm.my/14830/1/paper6.pdf http://eprints.usm.my/14830/ |
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my.usm.eprints.14830 http://eprints.usm.my/14830/ Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. L, S Chuah Hassan, Z Abu Hassan, H QC1 Physics (General) High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14830/1/paper6.pdf L, S Chuah and Hassan, Z and Abu Hassan, H (2007) Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur. |
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Universiti Sains Malaysia |
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Hamzah Sendut Library |
| collection |
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| continent |
Asia |
| country |
Malaysia |
| content_provider |
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| content_source |
USM Institutional Repository |
| url_provider |
http://eprints.usm.my/ |
| language |
English |
| topic |
QC1 Physics (General) |
| spellingShingle |
QC1 Physics (General) L, S Chuah Hassan, Z Abu Hassan, H Red Emission Of Thin Film Electroluminescent Device Based On p-GaN. |
| description |
High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by using radio-frequency molecular beam epitaxy (RF-MBE). |
| format |
Conference or Workshop Item |
| author |
L, S Chuah Hassan, Z Abu Hassan, H |
| author_facet |
L, S Chuah Hassan, Z Abu Hassan, H |
| author_sort |
L, S Chuah |
| title |
Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_short |
Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_full |
Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_fullStr |
Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_full_unstemmed |
Red Emission Of Thin Film Electroluminescent Device Based On p-GaN.
|
| title_sort |
red emission of thin film electroluminescent device based on p-gan. |
| publishDate |
2007 |
| url |
http://eprints.usm.my/14830/1/paper6.pdf http://eprints.usm.my/14830/ |
| _version_ |
1643702777666338816 |