Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.

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Bibliographic Details
Main Authors:	Thahab, S M, Abu Hassan, H., Hassan, Z.
Format:	Conference or Workshop Item
Language:	English
Published:	2007
Subjects:	QC1 Physics (General)
Online Access:	http://eprints.usm.my/14835/1/paper10.pdf http://eprints.usm.my/14835/
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Institution:	Universiti Sains Malaysia
Language:	English

id	my.usm.eprints.14835
record_format	eprints
spelling	my.usm.eprints.14835 http://eprints.usm.my/14835/ Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. Thahab, S M Abu Hassan, H. Hassan, Z. QC1 Physics (General) Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances. 2007 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/14835/1/paper10.pdf Thahab, S M and Abu Hassan, H. and Hassan, Z. (2007) Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects. In: Proceeding Of Malaysia-Japan International Symposium On Advanced Technology 2007 (MJISAT 2007), 12-15 November 2007, Seri Pacific Hotel, Kuala Lumpur.
institution	Universiti Sains Malaysia
building	Hamzah Sendut Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Sains Malaysia
content_source	USM Institutional Repository
url_provider	http://eprints.usm.my/
language	English
topic	QC1 Physics (General)
spellingShingle	QC1 Physics (General) Thahab, S M Abu Hassan, H. Hassan, Z. Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
description	Al0.15Ga0.85N/GaN heterostructure field effect transistors (HFETs) was simulated by using ISETCAD software with varying substrate type, gate length and source drain resistances.
format	Conference or Workshop Item
author	Thahab, S M Abu Hassan, H. Hassan, Z.
author_facet	Thahab, S M Abu Hassan, H. Hassan, Z.
author_sort	Thahab, S M
title	Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_short	Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_full	Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_fullStr	Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_full_unstemmed	Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.
title_sort	al0.15ga0.85n/gan heterostructure field effect transistors (hfet)device structure optimization and thermal effects.
publishDate	2007
url	http://eprints.usm.my/14835/1/paper10.pdf http://eprints.usm.my/14835/
_version_	1643702778879541248

Al0.15Ga0.85N/GaN Heterostructure Field Effect Transistors (HFET)Device Structure Optimization And Thermal Effects.

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