Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics
n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel...
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2012
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my.usm.eprints.29062 http://eprints.usm.my/29062/ Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics Mohd Rashid, Mohd Marzaini QC1 Physics (General) n-channel metal oxide semiconductor field effect transistor (n-MOSFET) fabrication requires specialized and expensive technologies such as ion implantation, chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl and hydrogen. Low cost emulsion photomask with 35 μm channel length is used in this work. Fabrikasi transistor semikonduktor logam oksida kesan medan saluran n-silikon, “nchannel metal oxide semiconductor field effect transistor (n-MOSFET)” memerlukan teknologi khusus dan berkos tinggi seperti penanam ion, endapan wap kimia dan gas-gas berbahaya seperti silane, asid hidroklorik dan hidrogen. Topeng foto berkos rendah dengan lebar saluran 35 μm digunakan di dalam projek ini. 2012 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29062/1/SILICON_n-CHANNEL_METAL_OXIDE_SEMI_CONDUCTOR_FIELD_EFFECT_TRANSISTOR_FABRICATION__AND_ITS_EFFECT_ON_OUTPUT_CHARACTERISTICS.pdf Mohd Rashid, Mohd Marzaini (2012) Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics. Masters thesis, Universiti Sains Malaysia. |
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QC1 Physics (General) Mohd Rashid, Mohd Marzaini Silicon n-Channel Metal Oxide Semiconductor Field Effect Transistor Fabrication And Its Effect On Output Characteristics |
| description |
n-channel metal oxide semiconductor field effect transistor (n-MOSFET)
fabrication requires specialized and expensive technologies such as ion implantation,
chemical vapor deposition (CVD) and hazardous gases such as silane (SiH4), HCl
and hydrogen. Low cost emulsion photomask with 35 μm channel length is used in
this work.
Fabrikasi transistor semikonduktor logam oksida kesan medan saluran n-silikon, “nchannel
metal oxide semiconductor field effect transistor (n-MOSFET)” memerlukan
teknologi khusus dan berkos tinggi seperti penanam ion, endapan wap kimia dan gas-gas
berbahaya seperti silane, asid hidroklorik dan hidrogen. Topeng foto berkos rendah dengan
lebar saluran 35 μm digunakan di dalam projek ini. |
| format |
Thesis |
| author |
Mohd Rashid, Mohd Marzaini |
| author_facet |
Mohd Rashid, Mohd Marzaini |
| author_sort |
Mohd Rashid, Mohd Marzaini |
| title |
Silicon n-Channel Metal Oxide
Semiconductor Field Effect Transistor
Fabrication And Its Effect On Output
Characteristics
|
| title_short |
Silicon n-Channel Metal Oxide
Semiconductor Field Effect Transistor
Fabrication And Its Effect On Output
Characteristics
|
| title_full |
Silicon n-Channel Metal Oxide
Semiconductor Field Effect Transistor
Fabrication And Its Effect On Output
Characteristics
|
| title_fullStr |
Silicon n-Channel Metal Oxide
Semiconductor Field Effect Transistor
Fabrication And Its Effect On Output
Characteristics
|
| title_full_unstemmed |
Silicon n-Channel Metal Oxide
Semiconductor Field Effect Transistor
Fabrication And Its Effect On Output
Characteristics
|
| title_sort |
silicon n-channel metal oxide
semiconductor field effect transistor
fabrication and its effect on output
characteristics |
| publishDate |
2012 |
| url |
http://eprints.usm.my/29062/1/SILICON_n-CHANNEL_METAL_OXIDE_SEMI_CONDUCTOR_FIELD_EFFECT_TRANSISTOR_FABRICATION__AND_ITS_EFFECT_ON_OUTPUT_CHARACTERISTICS.pdf http://eprints.usm.my/29062/ |
| _version_ |
1643706809020579840 |