The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology

Dengan adanya peningkatan teknologi bagi industri fabrikasi litar terkamil (IC) ke tahap 90nm dan seterusnya, masih terdapat isu yang perlu ditimbangkan untuk technologi yang lebih rendah (0.13μm dan 0.22μm). As the integrated circuit (IC) fabrication industry gears up to volume manufacturing of...

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Main Author: Lee, Kang Hai
Format: Thesis
Language:English
Published: 2006
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Online Access:http://eprints.usm.my/29274/1/The_effect_of_implant_angle.pdf
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Institution: Universiti Sains Malaysia
Language: English
id my.usm.eprints.29274
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spelling my.usm.eprints.29274 http://eprints.usm.my/29274/ The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology Lee, Kang Hai R5-920 Medicine (General) Dengan adanya peningkatan teknologi bagi industri fabrikasi litar terkamil (IC) ke tahap 90nm dan seterusnya, masih terdapat isu yang perlu ditimbangkan untuk technologi yang lebih rendah (0.13μm dan 0.22μm). As the integrated circuit (IC) fabrication industry gears up to volume manufacturing of 90nm technology node and beyond, there are issues still need to be addressed at the lower technology nodes such as 0.13μm and 0.22μm. 2006-07 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/29274/1/The_effect_of_implant_angle.pdf Lee, Kang Hai (2006) The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology. Masters thesis, USM.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic R5-920 Medicine (General)
spellingShingle R5-920 Medicine (General)
Lee, Kang Hai
The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology
description Dengan adanya peningkatan teknologi bagi industri fabrikasi litar terkamil (IC) ke tahap 90nm dan seterusnya, masih terdapat isu yang perlu ditimbangkan untuk technologi yang lebih rendah (0.13μm dan 0.22μm). As the integrated circuit (IC) fabrication industry gears up to volume manufacturing of 90nm technology node and beyond, there are issues still need to be addressed at the lower technology nodes such as 0.13μm and 0.22μm.
format Thesis
author Lee, Kang Hai
author_facet Lee, Kang Hai
author_sort Lee, Kang Hai
title The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology
title_short The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology
title_full The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology
title_fullStr The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology
title_full_unstemmed The Effect Of Implant Angle And Resist Shadowing In Submicron Implant Technology
title_sort effect of implant angle and resist shadowing in submicron implant technology
publishDate 2006
url http://eprints.usm.my/29274/1/The_effect_of_implant_angle.pdf
http://eprints.usm.my/29274/
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