Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography

Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography

In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etchin...

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Main Author: Lew, Kam Chung
Format: Thesis
Language:English
Published: 2011
Subjects:
TN1-997 Mining engineering. Metallurgy
Online Access:http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf
http://eprints.usm.my/43362/
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Institution: Universiti Sains Malaysia
Language: English
id my.usm.eprints.43362
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spelling my.usm.eprints.43362 http://eprints.usm.my/43362/ Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography Lew, Kam Chung TN1-997 Mining engineering. Metallurgy In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the uncover silicon layer and oxide layer, respectively. 2011-10 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf Lew, Kam Chung (2011) Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography. Masters thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic TN1-997 Mining engineering. Metallurgy
spellingShingle TN1-997 Mining engineering. Metallurgy
Lew, Kam Chung
Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
description In this research, AFM lithography was performed to create nanoscale oxide pattern of silicon nanowires transistor (SiNWT) structure via local anodic oxidation (LAO) process on silicon on insulator (SOI) surface. These nanoscale oxide patterns will act as a mask to protect silicon layer during etching. The SiNWT structures consist of a nanowire as a channel with contact pads of source (S), drain (D) and lateral gate (G). The fabricated device structure was then wet chemically etched with tetramethylammonium hydroxide (TMAH) and hydrofluoric acid (HF) to remove the uncover silicon layer and oxide layer, respectively.
format Thesis
author Lew, Kam Chung
author_facet Lew, Kam Chung
author_sort Lew, Kam Chung
title Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_short Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_full Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_fullStr Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_full_unstemmed Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
title_sort effect of tetramethylammonium hydroxide (tmah) etchant on the formation of silicon nanowires transistor patterned by atomic force microscopy (afm) lithography
publishDate 2011
url http://eprints.usm.my/43362/1/LEW%20KAM%20CHUNG.pdf
http://eprints.usm.my/43362/
_version_ 1643710723333816320

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