Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications

In this study, the structural, optical, and electrical properties of silicon and silicon carbide nanostructures are developed for photonic applications. Visible and ultraviolet (UV) photodetectors are fabricated based on optimized porous silicon (PS) and porous silicon carbide (PSC) nanostructures....

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Main Author: Naderi, Nima
Format: Thesis
Language:English
Published: 2013
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Online Access:http://eprints.usm.my/45163/1/Nima%20Naderi24.pdf
http://eprints.usm.my/45163/
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Institution: Universiti Sains Malaysia
Language: English
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spelling my.usm.eprints.45163 http://eprints.usm.my/45163/ Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications Naderi, Nima QC1 Physics (General) In this study, the structural, optical, and electrical properties of silicon and silicon carbide nanostructures are developed for photonic applications. Visible and ultraviolet (UV) photodetectors are fabricated based on optimized porous silicon (PS) and porous silicon carbide (PSC) nanostructures. In the first category of this work, the high-porosity and uniform PS samples are generated using an innovative combination of electroless and pulsed photoelectrochemical etching techniques. The electroless chemical etching is optimized by applying the delay time of 2 min prior to the electrochemical process to obtain the highest porosity (83%) and uniformity and hence enhanced photoluminescence (PL) intensity. Next, thermal carbonization of freshly-prepared PS samples is carried out to stabilize their optical and electrical characteristics. In the second category, the high-porosity and uniform PSC samples are synthesized through optimization of etching current density. The optimized sample (with J = 20 mA/cm2) shows the highest porosity (76%), highest surface roughness (137 nm), the most intense PL peak, and the highest stability compare to the other PSC samples. In the third category, high-porosity and uniform porous-shaped SiC thin films are grown based on TC-PS substrates using RF magnetron sputtering. The post annealing process at 1200 °C improves uniformity, grain size (1380 nm), surface roughness (610 nm), PL intensity (237.3 a.u.) and Raman red-shift (24 cm–1). Photodetectors are subsequently fabricated by depositing Schottky contacts onto all porous samples. The results show that the optimized nanostructures of silicon and silicon carbide with high porosity and uniformity are suitable materials for visible and UV photodetection. 2013-07 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/45163/1/Nima%20Naderi24.pdf Naderi, Nima (2013) Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications. PhD thesis, Universiti Sains Malaysia.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Naderi, Nima
Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications
description In this study, the structural, optical, and electrical properties of silicon and silicon carbide nanostructures are developed for photonic applications. Visible and ultraviolet (UV) photodetectors are fabricated based on optimized porous silicon (PS) and porous silicon carbide (PSC) nanostructures. In the first category of this work, the high-porosity and uniform PS samples are generated using an innovative combination of electroless and pulsed photoelectrochemical etching techniques. The electroless chemical etching is optimized by applying the delay time of 2 min prior to the electrochemical process to obtain the highest porosity (83%) and uniformity and hence enhanced photoluminescence (PL) intensity. Next, thermal carbonization of freshly-prepared PS samples is carried out to stabilize their optical and electrical characteristics. In the second category, the high-porosity and uniform PSC samples are synthesized through optimization of etching current density. The optimized sample (with J = 20 mA/cm2) shows the highest porosity (76%), highest surface roughness (137 nm), the most intense PL peak, and the highest stability compare to the other PSC samples. In the third category, high-porosity and uniform porous-shaped SiC thin films are grown based on TC-PS substrates using RF magnetron sputtering. The post annealing process at 1200 °C improves uniformity, grain size (1380 nm), surface roughness (610 nm), PL intensity (237.3 a.u.) and Raman red-shift (24 cm–1). Photodetectors are subsequently fabricated by depositing Schottky contacts onto all porous samples. The results show that the optimized nanostructures of silicon and silicon carbide with high porosity and uniformity are suitable materials for visible and UV photodetection.
format Thesis
author Naderi, Nima
author_facet Naderi, Nima
author_sort Naderi, Nima
title Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications
title_short Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications
title_full Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications
title_fullStr Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications
title_full_unstemmed Development Of Silicon And Silicon Carbide Nanostructures For Photonic Applications
title_sort development of silicon and silicon carbide nanostructures for photonic applications
publishDate 2013
url http://eprints.usm.my/45163/1/Nima%20Naderi24.pdf
http://eprints.usm.my/45163/
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