Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator

In this work, we have successfully grown a GaN layer by electron beam (e-beam) evaporator on aluminium nitride (AIN) layers using sapphire substrate. The AIN layers were prepared by molecular beam epitaxy (MBE) 1) directly on sapphire and 2) on GaN/sapphire MOCVD template. After the ebeam evapora...

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Bibliographic Details
Main Authors: Fikri, Z. M., Zainal,, N., Ibrahim, K.
Format: Conference or Workshop Item
Language:English
Published: 2015
Subjects:
Online Access:http://eprints.usm.my/48769/1/Section%20C%20162.pdf%20cut.pdf
http://eprints.usm.my/48769/
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Institution: Universiti Sains Malaysia
Language: English

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