Sol Concentration Effects on Sol-Gel Spin Coated Indium Nitride Thin Films
Indium nitride (InN) is a potential semiconductor material in the development of optical and electronic devices due to its unique properties such as the narrow ene1·gy band gap of 0.7 - 1.0 eV, high electron mobility and low carrier concentration. The present work focu sses on the synthesis of InN t...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48782/1/NG3.pdf%20done.pdf http://eprints.usm.my/48782/ |
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| Institution: | Universiti Sains Malaysia |
| Language: | English |
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