Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micr...
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my.usm.eprints.48819 http://eprints.usm.my/48819/ Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad QC1-999 Physics In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. In order to complete the device, 6 pairs of lnGaN/GaN multiquantum well structure was sandwiched with a 500 nm of p-GaN layer and 300 nm of nGaN layer by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 4:1. The crystal and optical properties of the samples were characterized using field effect scanning electron microscopy, high resolution x-ray diffraction spectroscopy, and photoluminescence spectroscopy. Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf Rais, Shamsul Amir Abdul and Najiha, Hayatun and Hassan, Zainuriah and Shuhaimi, Ahmad Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition. In: 6th International Conference on Solid State Science (ICSSST) 2017 & Technology and Workshop on Advanced Materials Technology: Growth & Characterization. |
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QC1-999 Physics Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
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In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet
region. In this study, 4 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. In order to complete the device, 6 pairs of lnGaN/GaN multiquantum well structure was sandwiched with a 500 nm of p-GaN layer and 300 nm of nGaN layer by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 4:1. The crystal and optical properties of the samples were characterized using field effect scanning electron microscopy, high resolution
x-ray diffraction spectroscopy, and photoluminescence spectroscopy. |
format |
Conference or Workshop Item |
author |
Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad |
author_facet |
Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad |
author_sort |
Rais, Shamsul Amir Abdul |
title |
Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
title_short |
Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
title_full |
Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
title_fullStr |
Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
title_full_unstemmed |
Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
title_sort |
fabrication of lnxga1-xn/gan multi-quantum well structure for green light emitting diode on patterned sapphire substrate by metal organic chemical vapour deposition |
url |
http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf http://eprints.usm.my/48819/ |
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1696977055106727936 |