Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micr...

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Main Authors: Rais, Shamsul Amir Abdul, Najiha, Hayatun, Hassan, Zainuriah, Shuhaimi, Ahmad
Format: Conference or Workshop Item
Language:English
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spelling my.usm.eprints.48819 http://eprints.usm.my/48819/ Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad QC1-999 Physics In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. In order to complete the device, 6 pairs of lnGaN/GaN multiquantum well structure was sandwiched with a 500 nm of p-GaN layer and 300 nm of nGaN layer by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 4:1. The crystal and optical properties of the samples were characterized using field effect scanning electron microscopy, high resolution x-ray diffraction spectroscopy, and photoluminescence spectroscopy. Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf Rais, Shamsul Amir Abdul and Najiha, Hayatun and Hassan, Zainuriah and Shuhaimi, Ahmad Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition. In: 6th International Conference on Solid State Science (ICSSST) 2017 & Technology and Workshop on Advanced Materials Technology: Growth & Characterization.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Rais, Shamsul Amir Abdul
Najiha, Hayatun
Hassan, Zainuriah
Shuhaimi, Ahmad
Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
description In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. In order to complete the device, 6 pairs of lnGaN/GaN multiquantum well structure was sandwiched with a 500 nm of p-GaN layer and 300 nm of nGaN layer by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 4:1. The crystal and optical properties of the samples were characterized using field effect scanning electron microscopy, high resolution x-ray diffraction spectroscopy, and photoluminescence spectroscopy.
format Conference or Workshop Item
author Rais, Shamsul Amir Abdul
Najiha, Hayatun
Hassan, Zainuriah
Shuhaimi, Ahmad
author_facet Rais, Shamsul Amir Abdul
Najiha, Hayatun
Hassan, Zainuriah
Shuhaimi, Ahmad
author_sort Rais, Shamsul Amir Abdul
title Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
title_short Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
title_full Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
title_fullStr Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
title_full_unstemmed Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
title_sort fabrication of lnxga1-xn/gan multi-quantum well structure for green light emitting diode on patterned sapphire substrate by metal organic chemical vapour deposition
url http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf
http://eprints.usm.my/48819/
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