Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique

• Main Authors: Sohimee, Siti Nurfarhana, Hassan, Zainuriah, Ahmed, Naser M., Radzali, Rosfariza, Way, Foong Lim
• Format: Conference or Workshop Item
• Language: English
• Published: 2020
• Subjects: QC1-999 Physics
• Online Access: http://eprints.usm.my/48935/1/MNRG_NZ02.pdf; http://eprints.usm.my/48935/
• Institution: Universiti Sains Malaysia

The theoretical and experimental study of porous p-type gallium nitride (GaN) is discussed in this work. Porous p-type GaN was adequately fabricated using alternating current photo-assisted electrochemical etching technique with various etching times (10, 20, 30, and 60 minutes) in mixed hydrofluori...