Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique

The theoretical and experimental study of porous p-type gallium nitride (GaN) is discussed in this work. Porous p-type GaN was adequately fabricated using alternating current photo-assisted electrochemical etching technique with various etching times (10, 20, 30, and 60 minutes) in mixed hydrofluori...

Full description

Saved in:
Bibliographic Details
Main Authors: Sohimee, Siti Nurfarhana, Hassan, Zainuriah, Ahmed, Naser M., Radzali, Rosfariza, Way, Foong Lim
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
Online Access:http://eprints.usm.my/48955/1/MNRG_ZH03.pdf
http://eprints.usm.my/48955/
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Sains Malaysia
Language: English
id my.usm.eprints.48955
record_format eprints
spelling my.usm.eprints.48955 http://eprints.usm.my/48955/ Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser M. Radzali, Rosfariza Way, Foong Lim QC1-999 Physics The theoretical and experimental study of porous p-type gallium nitride (GaN) is discussed in this work. Porous p-type GaN was adequately fabricated using alternating current photo-assisted electrochemical etching technique with various etching times (10, 20, 30, and 60 minutes) in mixed hydrofluoric acid and ethanol electrolyte solutions (1:4 volume ratios) under ultraviolet illuminations. The evolution of morphology of non-porous and porous p-type GaN as a function of etching time was imaged using field emission scanning electron microscopy measurement. Surface analysis revealed a sporadic pore size with circular shape was found in porous p-type GaN while smooth and no pores was observed in non-porous p-type GaN sample. Etching for a brief time frame resulted in small pores, and etching for longer times resulted in enormous pores. However, prolonged etching times of 60 minutes would prompt breakdown of porous layer. The average pore diameter and porosity of the investigated samples were estimated from the ImageJ software. Subsequent effort by investigating the structural characteristics of non-porous and porous samples by variety of methods, including high resolution x-ray diffraction and atomic force microscopy. A significant increase in the surface roughness was observed with an increase in the etching time. The discoveries found that the influence of etching duration has indicated noteworthy impacts towards morphological and structural properties of the porous p-type GaN, as supportively revealed through pore size, porosity, and surface roughness 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48955/1/MNRG_ZH03.pdf Sohimee, Siti Nurfarhana and Hassan, Zainuriah and Ahmed, Naser M. and Radzali, Rosfariza and Way, Foong Lim (2020) Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020).
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Sohimee, Siti Nurfarhana
Hassan, Zainuriah
Ahmed, Naser M.
Radzali, Rosfariza
Way, Foong Lim
Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
description The theoretical and experimental study of porous p-type gallium nitride (GaN) is discussed in this work. Porous p-type GaN was adequately fabricated using alternating current photo-assisted electrochemical etching technique with various etching times (10, 20, 30, and 60 minutes) in mixed hydrofluoric acid and ethanol electrolyte solutions (1:4 volume ratios) under ultraviolet illuminations. The evolution of morphology of non-porous and porous p-type GaN as a function of etching time was imaged using field emission scanning electron microscopy measurement. Surface analysis revealed a sporadic pore size with circular shape was found in porous p-type GaN while smooth and no pores was observed in non-porous p-type GaN sample. Etching for a brief time frame resulted in small pores, and etching for longer times resulted in enormous pores. However, prolonged etching times of 60 minutes would prompt breakdown of porous layer. The average pore diameter and porosity of the investigated samples were estimated from the ImageJ software. Subsequent effort by investigating the structural characteristics of non-porous and porous samples by variety of methods, including high resolution x-ray diffraction and atomic force microscopy. A significant increase in the surface roughness was observed with an increase in the etching time. The discoveries found that the influence of etching duration has indicated noteworthy impacts towards morphological and structural properties of the porous p-type GaN, as supportively revealed through pore size, porosity, and surface roughness
format Conference or Workshop Item
author Sohimee, Siti Nurfarhana
Hassan, Zainuriah
Ahmed, Naser M.
Radzali, Rosfariza
Way, Foong Lim
author_facet Sohimee, Siti Nurfarhana
Hassan, Zainuriah
Ahmed, Naser M.
Radzali, Rosfariza
Way, Foong Lim
author_sort Sohimee, Siti Nurfarhana
title Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
title_short Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
title_full Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
title_fullStr Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
title_full_unstemmed Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique
title_sort influence of etching time on the porous p-type gallium nitride using alternating current photo-assisted electrochemical etching technique
publishDate 2020
url http://eprints.usm.my/48955/1/MNRG_ZH03.pdf
http://eprints.usm.my/48955/
_version_ 1698697774959165440