The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures

This work presents the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures grown using Taiyo Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitax...

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Bibliographic Details
Main Authors: Yusof, Ahmad Sauffi, Hassan, Zainuriah, Hamady, Sidi, Sha, Shiong Ng, Ahmad, Mohd Anas, Way, Foong Lim, Fressengeas, Nicolas, Chevallier, Christyves
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/48969/1/MNRG_ZH09.pdf
http://eprints.usm.my/48969/
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Institution: Universiti Sains Malaysia
Language: English

Internet

http://eprints.usm.my/48969/1/MNRG_ZH09.pdf
http://eprints.usm.my/48969/

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