The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
This work presents the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures grown using Taiyo Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epita...
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| Main Authors: | , , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/49065/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2058.pdf http://eprints.usm.my/49065/ |
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| Institution: | Universiti Sains Malaysia |
| Language: | English |
| Summary: | This work presents the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures grown using Taiyo
Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitaxially grown on 3.8 μm and
40 nm thick undoped-GaN (ud-GaN) and GaN nucleation layer respectively over a commercial 2” c-plane flat sapphire substrate (FSS). The InGaN layers were grown at different temperature setting ranging from 860°C to 820°C in a step of 20°C. The details structural, surface morphology and optical properties were investigated using X-ray
diffraction (XRD), field emission scanning electron microscope (FE-SEM), atomic force microscopy (AFM) and ultraviolet-visible (UV-Vis) spectrophotometer respectively. |
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