Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method

In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and...

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Main Authors: Hamid, Maizatul Akmam Ab, Ng, Sha Shiong, Hassan, Zainuriah
Format: Conference or Workshop Item
Language:English
Published: 2020
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Online Access:http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf
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spelling my.usm.eprints.49090 http://eprints.usm.my/49090/ Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah QC1-999 Physics In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector applications. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf Hamid, Maizatul Akmam Ab and Ng, Sha Shiong and Hassan, Zainuriah (2020) Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Hamid, Maizatul Akmam Ab
Ng, Sha Shiong
Hassan, Zainuriah
Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
description In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector applications.
format Conference or Workshop Item
author Hamid, Maizatul Akmam Ab
Ng, Sha Shiong
Hassan, Zainuriah
author_facet Hamid, Maizatul Akmam Ab
Ng, Sha Shiong
Hassan, Zainuriah
author_sort Hamid, Maizatul Akmam Ab
title Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
title_short Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
title_full Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
title_fullStr Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
title_full_unstemmed Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
title_sort effects of annealing growth conditions of β-ga2o3 thin films for solar blind uv photodetectors by using sol-gel dip coating method
publishDate 2020
url http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf
http://eprints.usm.my/49090/
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