Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and...
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my.usm.eprints.49090 http://eprints.usm.my/49090/ Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah QC1-999 Physics In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector applications. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf Hamid, Maizatul Akmam Ab and Ng, Sha Shiong and Hassan, Zainuriah (2020) Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020. |
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QC1-999 Physics Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
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In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p-
Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The
root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth
conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector
applications. |
format |
Conference or Workshop Item |
author |
Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah |
author_facet |
Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah |
author_sort |
Hamid, Maizatul Akmam Ab |
title |
Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
title_short |
Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
title_full |
Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
title_fullStr |
Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
title_full_unstemmed |
Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
title_sort |
effects of annealing growth conditions of β-ga2o3 thin films for solar blind uv photodetectors by using sol-gel dip coating method |
publishDate |
2020 |
url |
http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf http://eprints.usm.my/49090/ |
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1699238017590362112 |