Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LEDs. Nonetheless, the overall efficiency of the GaN-on-GaN LEDs is still lower than the GaN-on-sapphire LEDs. The problem is associated to total internal reflection effect which is higher in the LEDs....
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Main Authors: | , , , , , |
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Format: | Conference or Workshop Item |
Language: | English |
Published: |
2020
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Subjects: | |
Online Access: | http://eprints.usm.my/49096/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2076.pdf http://eprints.usm.my/49096/ |
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Institution: | Universiti Sains Malaysia |
Language: | English |