Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide
This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D sem...
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my.utem.eprints.130802015-05-28T04:29:35Z http://eprints.utem.edu.my/id/eprint/13080/ Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide Mardiana, Bidin Haroon, Hazura Hanim, Abdul Razak Menon, P.S Abdullah, H. TA Engineering (General). Civil engineering (General) This paper highlights the study of the carrier injection mode and the carrier depletion mode of the phase modulator. The phase modulator device has been integrated in the silicon rib waveguide by using the p-i-n diode structure. The electrical device performance is predicted by using the 2-D semiconductor package SILVACO (CAD) software under DC operation. Summarily, the phase modulator device has less sensitivity to the effective refractive index changes when operating in reverse biased or depletion mode compared to the forward biased or injection mode. 2010 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/13080/1/isce_mar.pdf Mardiana, Bidin and Haroon, Hazura and Hanim, Abdul Razak and Menon, P.S and Abdullah, H. (2010) Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide. In: IEEE International Conference on Semiconductor Electronics (ICSE 2010), 28-30 Jun 2010, Melaka. |
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TA Engineering (General). Civil engineering (General) Mardiana, Bidin Haroon, Hazura Hanim, Abdul Razak Menon, P.S Abdullah, H. Operation mode of phase modulation based on carrier dispersion effect in p-i-n diode of silicon rib waveguide |
description |
This paper highlights the study of the carrier injection
mode and the carrier depletion mode of the phase modulator. The
phase modulator device has been integrated in the silicon rib
waveguide by using the p-i-n diode structure. The electrical
device performance is predicted by using the 2-D semiconductor
package SILVACO (CAD) software under DC operation.
Summarily, the phase modulator device has less sensitivity to the
effective refractive index changes when operating in reverse
biased or depletion mode compared to the forward biased or
injection mode. |
format |
Conference or Workshop Item |
author |
Mardiana, Bidin Haroon, Hazura Hanim, Abdul Razak Menon, P.S Abdullah, H. |
author_facet |
Mardiana, Bidin Haroon, Hazura Hanim, Abdul Razak Menon, P.S Abdullah, H. |
author_sort |
Mardiana, Bidin |
title |
Operation mode of phase modulation based on carrier
dispersion effect in p-i-n diode of silicon rib
waveguide |
title_short |
Operation mode of phase modulation based on carrier
dispersion effect in p-i-n diode of silicon rib
waveguide |
title_full |
Operation mode of phase modulation based on carrier
dispersion effect in p-i-n diode of silicon rib
waveguide |
title_fullStr |
Operation mode of phase modulation based on carrier
dispersion effect in p-i-n diode of silicon rib
waveguide |
title_full_unstemmed |
Operation mode of phase modulation based on carrier
dispersion effect in p-i-n diode of silicon rib
waveguide |
title_sort |
operation mode of phase modulation based on carrier
dispersion effect in p-i-n diode of silicon rib
waveguide |
publishDate |
2010 |
url |
http://eprints.utem.edu.my/id/eprint/13080/1/isce_mar.pdf http://eprints.utem.edu.my/id/eprint/13080/ |
_version_ |
1665905528072568832 |