Design and electrical simulation of a 22nm MOSFET with graphene bilayer channel using double high-k metal gate

• Main Authors: Abdul Hamid, Afifah Maheran, Kaharudin, Khairil Ezwan, Yahaya, Izwanizam, Salehuddin, Fauziyah
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis 2022
• Online Access: http://eprints.utem.edu.my/id/eprint/26312/2/IJNEAM2021032_Final_pr_Verified.pdf; http://eprints.utem.edu.my/id/eprint/26312/; https://ijneam.unimap.edu.my/images/PDF/ijneam%20apr%202022%20pdf/IJNEAM2021032_Final_pr_Verified.pdf
• Institution: Universiti Teknikal Malaysia Melaka

This paper will discuss the virtual fabrication design process of a 22nm MOSFET bilayer graphene with high-ĸ metal gate (HKMG). Silvaco software's TCAD fabrication tools were utilized, with the Athena simulation module used to construct the device design and the Atlas module used to describe th...