An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer

An Investigation on I-V Characteristic for CMOS PIN Photodiode: Variable I-Layer

In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device,...

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Bibliographic Details
Main Authors: Othman, Mohd Azlishah, Mohammed Napiah, Zul Atfyi Fauzan, Ismail, Mohd Muzafar, Sulaiman, Hamzah Asyrani, Misran, Mohamad Harris, Meor Said, Maizatul Alice
Format: Conference or Workshop Item
Language:English
Published: 2012
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utem.edu.my/id/eprint/6884/1/Yash_PIN_ICDV2012_28.pdf
http://eprints.utem.edu.my/id/eprint/6884/
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Institution: Universiti Teknikal Malaysia Melaka
Language: English
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Summary:In this paper presented an investigation on I-V characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different I-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design (TCAD) tools. The I-layer thickness (or width) is varied from 4 µm to 8 µm in order to investigate its effects on the current-voltage (I-V) characteristics. These structures were design based on CMOS process. Keyword - PIN Photodiode, Silvaco TCAD, IV Characteristic, Reverse Bias.

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