Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip

In this work, influence of Copper free air ball (FAB) oxidation towards Intermetallic Compound (IMC) at Copper wire-Aluminum bond pad metallization (Cu/Al) is studied. Samples are synthesized with different Copper FAB oxidation condition by turning Forming Gas supply ON and OFF. Studies are performe...

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Main Authors: Thangaraj, Joseph Sahaya Anand, Chua, Kok Yau, Lim, Boon Huat
Format: Article
Language:English
Published: Elsevier 2012
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Online Access:http://eprints.utem.edu.my/id/eprint/6949/1/22_MCP_136.pdf
http://eprints.utem.edu.my/id/eprint/6949/
http://www.journals.elsevier.com/materials-chemistry-and-physics
http://dx.doi.org/10.1016/j.matchemphys.2012.07.036,
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Institution: Universiti Teknikal Malaysia Melaka
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spelling my.utem.eprints.69492023-05-25T10:32:41Z http://eprints.utem.edu.my/id/eprint/6949/ Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip Thangaraj, Joseph Sahaya Anand Chua, Kok Yau Lim, Boon Huat TJ Mechanical engineering and machinery In this work, influence of Copper free air ball (FAB) oxidation towards Intermetallic Compound (IMC) at Copper wire-Aluminum bond pad metallization (Cu/Al) is studied. Samples are synthesized with different Copper FAB oxidation condition by turning Forming Gas supply ON and OFF. Studies are performed using Optical Microscope (OM), Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and line-scan Energy Dispersive X-ray (EDX). SEM result shows there is a cross-sectional position offset from center in sample synthesized with Forming Gas OFF. This is due to difficulty of determining the position of cross-section in manual grinding/polishing process and high occurrence rate of golf-clubbed shape of oxidized Copper ball bond. TEM inspection reveals that the Copper ball bond on sample synthesized with Forming Gas OFF is having intermediate oxidation. Besides, the presence of IMC at the bonding interface of Cu/Al for both samples is seen. TEM study shows voids form at the bonding interface of Forming Gas ON sample belongs to unbonded area; while that in Forming Gas OFF sample is due to volume shrinkage of IMC growth. Line-scan EDX shows the phases present in the interfaces of as-bonded samples are Al4Cu9 (~3nm) for sample with Forming Gas ON and mixed CuAl and CuAl2 (~15nm) for sample with Forming Gas OFF. Thicker IMC in sample with Forming Gas OFF is due to cross-section is positioned at high stress area that is close to edge of ball bond. Mechanical ball shear test shows that shear strength of sample with Forming Gas OFF is about 19% lower than that of sample with Forming Gas ON. Interface temperature is estimated at 437°C for as-bonded sample with Forming Gas ON by using empirical parabolic law of volume diffusion. Elsevier 2012-10-15 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/6949/1/22_MCP_136.pdf Thangaraj, Joseph Sahaya Anand and Chua, Kok Yau and Lim, Boon Huat (2012) Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip. Materials Chemistry and Physics, 136 (2-3). pp. 638-647. ISSN 0254-0584 http://www.journals.elsevier.com/materials-chemistry-and-physics http://dx.doi.org/10.1016/j.matchemphys.2012.07.036,
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
Thangaraj, Joseph Sahaya Anand
Chua, Kok Yau
Lim, Boon Huat
Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip
description In this work, influence of Copper free air ball (FAB) oxidation towards Intermetallic Compound (IMC) at Copper wire-Aluminum bond pad metallization (Cu/Al) is studied. Samples are synthesized with different Copper FAB oxidation condition by turning Forming Gas supply ON and OFF. Studies are performed using Optical Microscope (OM), Scanning Electron Microscope (SEM), Transmission Electron Microscope (TEM) and line-scan Energy Dispersive X-ray (EDX). SEM result shows there is a cross-sectional position offset from center in sample synthesized with Forming Gas OFF. This is due to difficulty of determining the position of cross-section in manual grinding/polishing process and high occurrence rate of golf-clubbed shape of oxidized Copper ball bond. TEM inspection reveals that the Copper ball bond on sample synthesized with Forming Gas OFF is having intermediate oxidation. Besides, the presence of IMC at the bonding interface of Cu/Al for both samples is seen. TEM study shows voids form at the bonding interface of Forming Gas ON sample belongs to unbonded area; while that in Forming Gas OFF sample is due to volume shrinkage of IMC growth. Line-scan EDX shows the phases present in the interfaces of as-bonded samples are Al4Cu9 (~3nm) for sample with Forming Gas ON and mixed CuAl and CuAl2 (~15nm) for sample with Forming Gas OFF. Thicker IMC in sample with Forming Gas OFF is due to cross-section is positioned at high stress area that is close to edge of ball bond. Mechanical ball shear test shows that shear strength of sample with Forming Gas OFF is about 19% lower than that of sample with Forming Gas ON. Interface temperature is estimated at 437°C for as-bonded sample with Forming Gas ON by using empirical parabolic law of volume diffusion.
format Article
author Thangaraj, Joseph Sahaya Anand
Chua, Kok Yau
Lim, Boon Huat
author_facet Thangaraj, Joseph Sahaya Anand
Chua, Kok Yau
Lim, Boon Huat
author_sort Thangaraj, Joseph Sahaya Anand
title Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip
title_short Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip
title_full Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip
title_fullStr Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip
title_full_unstemmed Oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip
title_sort oxidation study on as-bonded intermetallic of copper wire-aluminum bond pad metallization for electronic microchip
publisher Elsevier
publishDate 2012
url http://eprints.utem.edu.my/id/eprint/6949/1/22_MCP_136.pdf
http://eprints.utem.edu.my/id/eprint/6949/
http://www.journals.elsevier.com/materials-chemistry-and-physics
http://dx.doi.org/10.1016/j.matchemphys.2012.07.036,
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