A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications

A First-principles study based on density functional theory was accomplished to examine the different properties of ABVO4 (A = Pb/Cd, B––La/Lu) materials such as structural, optical, and electronic properties. The band gap of Pb/Cd-doped LuVO4 is found to be remarkably and significantly decreased...

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Main Authors: Jameel, Muhammad Hasnain, Agam, Mohd Arif, Roslan, Muhammad Sufi, Jabbar, Abdullah Hasan, Malik, Rami Qays, Muhammad Usama Islam, Muhammad Usama Islam, Ali Raza, Ali Raza, Subhani, Rasheed Ahmad
Format: Article
Language:English
Published: Elsevier 2023
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Online Access:http://eprints.uthm.edu.my/11237/1/J15421_08da9a803d0181cc4283a8ec5f7773e4.pdf
http://eprints.uthm.edu.my/11237/
https://doi.org/10.1016/j.cocom.2022.e00773
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Institution: Universiti Tun Hussein Onn Malaysia
Language: English
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spelling my.uthm.eprints.112372024-06-26T07:38:02Z http://eprints.uthm.edu.my/11237/ A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications Jameel, Muhammad Hasnain Agam, Mohd Arif Roslan, Muhammad Sufi Jabbar, Abdullah Hasan Malik, Rami Qays Muhammad Usama Islam, Muhammad Usama Islam Ali Raza, Ali Raza Subhani, Rasheed Ahmad T Technology (General) A First-principles study based on density functional theory was accomplished to examine the different properties of ABVO4 (A = Pb/Cd, B––La/Lu) materials such as structural, optical, and electronic properties. The band gap of Pb/Cd-doped LuVO4 is found to be remarkably and significantly decreased from 2.921 to 1.71eV as compared to a decrement of 3.455 to 2.650eV in Pb/Cd-doped LaVO4. Under the DFT study, Pb (Lead) and Cd (Cadmium) are appropriate materials for band gap decrement of LuVO4 and LaVO4. The nature of the band gap was found indirect moreover band gap indicated that materials are prominent semiconductors. Pb/Cd is doped at the vanadium (V) sites, which are more advantageous than the La/Lu sites. By capturing Pb/Cd at the V sites in LuVO4/ LaVO4, additional gamma points were incorporated into the electronic band gap energy (Eg). A significant decrement is found in the band gap as well as optical conductivity. After the substitution of different impurities of Pb/Cd the energy absorption peaks are increased. It is also examined that after doping of Pb/Cd optical conductivity shifted toward larger energy because of the band gap. Both Pb/Cd-doped LuVO4 and Pb/Cd-doped LaVO4 compounds have high optical conductivity, refractive index, and energy absorption moreover Pb/Cddoped LuVO4 is a more appropriate material as compared to Pb/Cd-doped LaVO4 for electronic device applications. Elsevier 2023 Article PeerReviewed text en http://eprints.uthm.edu.my/11237/1/J15421_08da9a803d0181cc4283a8ec5f7773e4.pdf Jameel, Muhammad Hasnain and Agam, Mohd Arif and Roslan, Muhammad Sufi and Jabbar, Abdullah Hasan and Malik, Rami Qays and Muhammad Usama Islam, Muhammad Usama Islam and Ali Raza, Ali Raza and Subhani, Rasheed Ahmad (2023) A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications. Computational Condensed Matter, 34. pp. 1-12. https://doi.org/10.1016/j.cocom.2022.e00773
institution Universiti Tun Hussein Onn Malaysia
building UTHM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tun Hussein Onn Malaysia
content_source UTHM Institutional Repository
url_provider http://eprints.uthm.edu.my/
language English
topic T Technology (General)
spellingShingle T Technology (General)
Jameel, Muhammad Hasnain
Agam, Mohd Arif
Roslan, Muhammad Sufi
Jabbar, Abdullah Hasan
Malik, Rami Qays
Muhammad Usama Islam, Muhammad Usama Islam
Ali Raza, Ali Raza
Subhani, Rasheed Ahmad
A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications
description A First-principles study based on density functional theory was accomplished to examine the different properties of ABVO4 (A = Pb/Cd, B––La/Lu) materials such as structural, optical, and electronic properties. The band gap of Pb/Cd-doped LuVO4 is found to be remarkably and significantly decreased from 2.921 to 1.71eV as compared to a decrement of 3.455 to 2.650eV in Pb/Cd-doped LaVO4. Under the DFT study, Pb (Lead) and Cd (Cadmium) are appropriate materials for band gap decrement of LuVO4 and LaVO4. The nature of the band gap was found indirect moreover band gap indicated that materials are prominent semiconductors. Pb/Cd is doped at the vanadium (V) sites, which are more advantageous than the La/Lu sites. By capturing Pb/Cd at the V sites in LuVO4/ LaVO4, additional gamma points were incorporated into the electronic band gap energy (Eg). A significant decrement is found in the band gap as well as optical conductivity. After the substitution of different impurities of Pb/Cd the energy absorption peaks are increased. It is also examined that after doping of Pb/Cd optical conductivity shifted toward larger energy because of the band gap. Both Pb/Cd-doped LuVO4 and Pb/Cd-doped LaVO4 compounds have high optical conductivity, refractive index, and energy absorption moreover Pb/Cddoped LuVO4 is a more appropriate material as compared to Pb/Cd-doped LaVO4 for electronic device applications.
format Article
author Jameel, Muhammad Hasnain
Agam, Mohd Arif
Roslan, Muhammad Sufi
Jabbar, Abdullah Hasan
Malik, Rami Qays
Muhammad Usama Islam, Muhammad Usama Islam
Ali Raza, Ali Raza
Subhani, Rasheed Ahmad
author_facet Jameel, Muhammad Hasnain
Agam, Mohd Arif
Roslan, Muhammad Sufi
Jabbar, Abdullah Hasan
Malik, Rami Qays
Muhammad Usama Islam, Muhammad Usama Islam
Ali Raza, Ali Raza
Subhani, Rasheed Ahmad
author_sort Jameel, Muhammad Hasnain
title A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications
title_short A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications
title_full A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications
title_fullStr A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications
title_full_unstemmed A comparative DFT study of electronic and optical properties of Pb/ Cd-doped LaVO4 and Pb/Cd-LuVO4 for electronic device applications
title_sort comparative dft study of electronic and optical properties of pb/ cd-doped lavo4 and pb/cd-luvo4 for electronic device applications
publisher Elsevier
publishDate 2023
url http://eprints.uthm.edu.my/11237/1/J15421_08da9a803d0181cc4283a8ec5f7773e4.pdf
http://eprints.uthm.edu.my/11237/
https://doi.org/10.1016/j.cocom.2022.e00773
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