A content-addressable memory structure using novel majority gate with 5-input in quantum-dot cellular automata

• Main Authors: H. Majeed, Ali, Zainal, Mohd Shamian, Alkaldy, Esam, Md Nor, Danial
• Format: Article
• Language: English
• Published: UTHM Publishing 2020
• Subjects: T Technology (General)
• Online Access: http://eprints.uthm.edu.my/6366/1/AJ%202020%20%28825%29.pdf; http://eprints.uthm.edu.my/6366/; https://doi.org/10.30880/ijie.2020.12.04.003
• Institution: Universiti Tun Hussein Onn Malaysia

Quantum-dot Cellular Automata (QCA) technology is one of the most important new nanotechnologies and is a suitable replacement for CMOS circuits. Majority gate and Inverter are the primary building blocks in QCA circuits. Content Addressable Memory (CAM) is a type of memory used in applications that require high speed. In this paper, a novel five input majority gate is introduced. This gate is simulated with QCADesigner tool and compared with previous same structures. Then, the proposed gate used to design a CAM cell in a single layer after deriving the minority gate from the proposed majority gate. The proposed CAM cell has a simple and robust structure and does not require wire crossover, also it reduces circuit complexity by 7% in term of cell count compared to existing structures.