Simulation, fabrication and characterization of PMOS transistor device
In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s bette r low power/low volt...
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| Format: | Thesis |
| Language: | English English English |
| Published: |
2006
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| Subjects: | |
| Online Access: | http://eprints.uthm.edu.my/7120/1/24p%20SITI%20IDZURA%20YUSUF.pdf http://eprints.uthm.edu.my/7120/2/SITI%20IDZURA%20YUSUF%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/7120/3/SITI%20IDZURA%20YUSUF%20WATERMARK.pdf http://eprints.uthm.edu.my/7120/ |
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| Institution: | Universiti Tun Hussein Onn Malaysia |
| Language: | English English English |
| Summary: | In a low suppl y voltage CMO S technology , it is desirabl e to scal e threshold
voltage and gate length for improvin g circuit performance . Therefore , a projec t ha s been
carried out inside KUiTTHO's microelectroni c cleanroom to produc e a metho d that ha s
bette r low power/low voltage current concentrat e on p-channe l (PMOS). A n experimen t
w a s also don e to determin e the right paramete r value to b e use d for fabrication process
such as oxidation process thickness rate, shee t resistanc e and meta l thickness. From the
paramete r value obtained, 0.3 m m an d 0.5 m m PMO S transistor ha d bee n successfully
produced . Fabrication simulation wa s performe d to produc e a 0.1 |am an d 0.3p.m PMO S
transistor by using the ISE-TCA D software . Th e trade off betwee n threshold voltage
(VTH), gat e length (LG) and thin oxide thickness (t o x ) are discusse d to determin e the
characteristics of the transistors. It show s that for 0.3mm (toX = 860A ) PMO S transistor
the value of VT H =-3.33V and 0.5 m m (t ^ = 910A), V T H value =-4.3V. From the
simulation result show for 0.1 jim (to* = 200A), VT H = -0.314V an d for 0.5|im (400A)
Vt h = -0.634V. Th e result shows that, with decreasin g gat e length an d oxide thickness
will produc e lowe r value of threshold voltage . Minimu m value of threshold voltage can
result in a better performanc e of transistor. Anothe r paramete r must b e taken into
consideration such as leakage current, resistivity and conductivity to get a better design
of PMO S transistor in futur e research. |
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