Performance analysis of 14nm SOI-based Trigate Gaussian Channel Junctionless FinFET with punchthrough stop layer

In this paper, 14nm Silicon-On-Insulator-based Gaussian Channel Junctionless FinFET is presented. The gate length of 14nm is considered along with an Equivalent Oxide Thickness (EOT) of 1nm, 5nm as fin width, and the work function of the gate metal is 4.75eV. The device architecture has a non-unifor...

Full description

Saved in:
Bibliographic Details
Main Authors: Ramakrishnan, Mathangi, Alias, N. Ezaila, Tan, M. L. Peng, Hamzah, Afiq, Abdul Wahab, Yasmin, Hussin, Hanim
Format: Conference or Workshop Item
Published: 2023
Subjects:
Online Access:http://eprints.utm.my/108359/
http://dx.doi.org/10.1109/RSM59033.2023.10326895
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia