Characterization and optimization of Ion-Sensitive Field Effect Transistor (ISFET) with different gate dielectric and thickness

• Main Authors: Mohamed Sultan, Suhana, Kong, Jason Kai Seng
• Format: Conference or Workshop Item
• Published: 2023
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/108374/; http://dx.doi.org/10.1109/RSM59033.2023.10327238
• Institution: Universiti Teknologi Malaysia

The ion-sensitive field effect transistor (ISFET) is one of the emerging chemical sensors with advantages in miniaturization, low-cost manufacture and short response time. Previous studies primarily focused on the types of gate dielectric materials of ISFET and their respective sensitivity in terms...