Compact, high-Q, and low-current dissipation CMOS differential active inductor

Compact, high-Q, and low-current dissipation CMOS differential active inductor

This letter presents an improved, compact, and tunable high-Q differential active inductor implemented in Silterra's industry standard 0.18 µm CMOS process. The improved differential active inductor demonstrates a Q ˜ 1000 at high frequency region. Low-current dissipation is achieved by reusing...

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Main Authors: Chun, Lee Ler, A'Ain, Abu Khari, Kordesch, Albert Victor
Format: Article
Published: Institute of Electrical and Electronics Engineers 2008
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/12516/
http://dx.doi.org/10.1109/LMWC.2008.2003465
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Institution: Universiti Teknologi Malaysia
id my.utm.12516
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spelling my.utm.125162017-10-25T03:51:53Z http://eprints.utm.my/id/eprint/12516/ Compact, high-Q, and low-current dissipation CMOS differential active inductor Chun, Lee Ler A'Ain, Abu Khari Kordesch, Albert Victor TK Electrical engineering. Electronics Nuclear engineering This letter presents an improved, compact, and tunable high-Q differential active inductor implemented in Silterra's industry standard 0.18 µm CMOS process. The improved differential active inductor demonstrates a Q ˜ 1000 at high frequency region. Low-current dissipation is achieved by reusing the current from the differential gyrator for stabilizer and negative impedance circuit. A replica bias circuit has been introduced to allow current-controlled inductance of the improved differential active inductor. Sensitivity of the improved differential active inductor to process variation is also included in this letter. Institute of Electrical and Electronics Engineers 2008-10 Article PeerReviewed Chun, Lee Ler and A'Ain, Abu Khari and Kordesch, Albert Victor (2008) Compact, high-Q, and low-current dissipation CMOS differential active inductor. IEEE Microwave and Wireless Components Letters , 18 . 683-685 . ISSN 1531-1309 http://dx.doi.org/10.1109/LMWC.2008.2003465 DOI:10.1109/LMWC.2008.2003465
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Chun, Lee Ler
A'Ain, Abu Khari
Kordesch, Albert Victor
Compact, high-Q, and low-current dissipation CMOS differential active inductor
description This letter presents an improved, compact, and tunable high-Q differential active inductor implemented in Silterra's industry standard 0.18 µm CMOS process. The improved differential active inductor demonstrates a Q ˜ 1000 at high frequency region. Low-current dissipation is achieved by reusing the current from the differential gyrator for stabilizer and negative impedance circuit. A replica bias circuit has been introduced to allow current-controlled inductance of the improved differential active inductor. Sensitivity of the improved differential active inductor to process variation is also included in this letter.
format Article
author Chun, Lee Ler
A'Ain, Abu Khari
Kordesch, Albert Victor
author_facet Chun, Lee Ler
A'Ain, Abu Khari
Kordesch, Albert Victor
author_sort Chun, Lee Ler
title Compact, high-Q, and low-current dissipation CMOS differential active inductor
title_short Compact, high-Q, and low-current dissipation CMOS differential active inductor
title_full Compact, high-Q, and low-current dissipation CMOS differential active inductor
title_fullStr Compact, high-Q, and low-current dissipation CMOS differential active inductor
title_full_unstemmed Compact, high-Q, and low-current dissipation CMOS differential active inductor
title_sort compact, high-q, and low-current dissipation cmos differential active inductor
publisher Institute of Electrical and Electronics Engineers
publishDate 2008
url http://eprints.utm.my/id/eprint/12516/
http://dx.doi.org/10.1109/LMWC.2008.2003465
_version_ 1643645973296054272

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