Morphological and electrical characterization of gaas nanowires
GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressure reactor chamber. The growth follows the vapor-liquid solid mechanism by applying nanoparticle gold colloid on the (111)B GaAs substrate. The growth process were done at temperatures ranging from 38...
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| Main Authors: | , , , |
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| Format: | Book Section |
| Published: |
American Institute of Physics
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/12983/ http://dx.doi.org/10.1063/1.3192266 |
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| Institution: | Universiti Teknologi Malaysia |