Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

Design, fabrication and characterization of a Schottky diode on an AlGaAs/GaAs HEMT structure for on-chip RF power detection

A Schottky diode was designed and fabricated on an n-AlGaAs/GaAs high electron mobility transistor (HEMT) structure for RF power detection. The processing steps used in the fabrication were the conventional steps used in standard GaAs processing. Current–voltage measurements showed that the devices...

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Bibliographic Details
Main Authors: Mustafaa, Farahiyah, Parimona, Norfarariyanti, Hashim, Abdul Manaf, Abd. Rahman, Shaharin Fadzli, Abdul Rahman, Abdul Rahim, Osman, Mohd. Nizam
Format: Article
Published: Elsevier Ltd. 2010
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Online Access:http://eprints.utm.my/id/eprint/22942/
http://dx.doi.org/10.1016/j.spmi.2009.10.011
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Institution: Universiti Teknologi Malaysia

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http://eprints.utm.my/id/eprint/22942/
http://dx.doi.org/10.1016/j.spmi.2009.10.011

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