Modeling and Characterization of Majority (MAJ) type Single-Electron Full Adder using SIMON

• Main Authors: Hashim, Abdul Manaf, Murugiah, Gugeneshwaran
• Format: Article
• Published: Penerbit UTM Press 2010
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/25951/; https://dx.doi.org/10.11113/jt.v49.200
• Institution: Universiti Teknologi Malaysia

Single Electron Transistor (SET), distinguished by a very small device size and low power dissipation, is one of the most promising nanoelectronic devices to replace conventional CMOS. It is based on controlling the transport of an individual electron. This paper focuses on the modeling and characte...