Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application

Prediction of n-AlGaAs/GaAs Schottky diode properties for milliwatt range application

The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device application without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the A1GaAs/GaAs HEMT Schottky diode is presented. The RF sign...

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Bibliographic Details
Main Authors: Parimon, Norfarariyanti, Mustafa, Farahiyah, Hashim, Abdul Manaf, Abd. Rahman, Shaharin Fadzli, Abdul Rahman, Abdul Rahim, Osman, Mohd. Nizam, Abdul Aziz, Azlan, Hashim, Md. Roslan
Format: Article
Language:English
Published: IDOSI Publications 2010
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/25971/2/9.pdf
http://eprints.utm.my/id/eprint/25971/
http://www.idosi.org/wasj/wasj9(Nanotechnology)10/9.pdf
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Institution: Universiti Teknologi Malaysia
Language: English

Internet

http://eprints.utm.my/id/eprint/25971/2/9.pdf
http://eprints.utm.my/id/eprint/25971/
http://www.idosi.org/wasj/wasj9(Nanotechnology)10/9.pdf

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