Digital signal propagation delay in a nano-circuit containing reactive and resistive elements
The transient switching delay in a micro/nano-scale circuit containing resistive and reactive elements are sternly affected by the surge in the resistance arising from sub-linear current-voltage (I-V) characteristics limited by the velocity and current saturation. The saturation arises due to the re...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Elsevier Limited
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/28963/ http://dx.doi.org/10.1016/j.sse.2011.04.004 |
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| Institution: | Universiti Teknologi Malaysia |
| Summary: | The transient switching delay in a micro/nano-scale circuit containing resistive and reactive elements are sternly affected by the surge in the resistance arising from sub-linear current-voltage (I-V) characteristics limited by the velocity and current saturation. The saturation arises due to the realignment of randomly oriented velocity vectors to the unidirectional streamlined ones in a high electric field when voltage applied across a resistor exceeds its decreasing critical value with reduced channel length. The frequency response f = 1/2πτt is affected by a transit time delay τt is lower than that predicted from the application of Ohm's law. The resistance surge dramatically boosts the RC time constant and switching delay and attenuates the L/R time constant and switching delay. |
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