The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts

The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts

The ballistic mobility degradation is shown to originate from nonstationary (transient) transport in response to the ohmic electric field. The source and drain reservoirs launch electrons into the channel with injection velocity transiting the channel with finite ballisticity defined as the probabil...

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Main Authors: Arora, Vijay Kumar, A. Riyadi, Munawar
Format: Article
Published: American Institute of Physics 2011
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/29481/
http://dx.doi.org/10.1063/1.3554623
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Institution: Universiti Teknologi Malaysia
id my.utm.29481
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spelling my.utm.294812017-02-13T07:24:11Z http://eprints.utm.my/id/eprint/29481/ The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts Arora, Vijay Kumar A. Riyadi, Munawar TK Electrical engineering. Electronics Nuclear engineering The ballistic mobility degradation is shown to originate from nonstationary (transient) transport in response to the ohmic electric field. The source and drain reservoirs launch electrons into the channel with injection velocity transiting the channel with finite ballisticity defined as the probability of a collision-free flight. The distinction is made between the ballistic mean free path and that present in a long channel. The results are in excellent agreement with those obtained from Monte Carlo procedures and experiments. American Institute of Physics 2011 Article PeerReviewed Arora, Vijay Kumar and A. Riyadi, Munawar (2011) The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts. Journal of Applied Physics, 109 (5). pp. 1-3. ISSN 1877-7058 http://dx.doi.org/10.1063/1.3554623 10.1063/1.3554623
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Arora, Vijay Kumar
A. Riyadi, Munawar
The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
description The ballistic mobility degradation is shown to originate from nonstationary (transient) transport in response to the ohmic electric field. The source and drain reservoirs launch electrons into the channel with injection velocity transiting the channel with finite ballisticity defined as the probability of a collision-free flight. The distinction is made between the ballistic mean free path and that present in a long channel. The results are in excellent agreement with those obtained from Monte Carlo procedures and experiments.
format Article
author Arora, Vijay Kumar
A. Riyadi, Munawar
author_facet Arora, Vijay Kumar
A. Riyadi, Munawar
author_sort Arora, Vijay Kumar
title The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
title_short The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
title_full The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
title_fullStr The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
title_full_unstemmed The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
title_sort channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts
publisher American Institute of Physics
publishDate 2011
url http://eprints.utm.my/id/eprint/29481/
http://dx.doi.org/10.1063/1.3554623
_version_ 1643648308289208320

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