The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts

• المؤلفون الرئيسيون: Arora, Vijay Kumar, A. Riyadi, Munawar
• التنسيق: مقال
• منشور في: American Institute of Physics 2011
• الموضوعات: TK Electrical engineering. Electronics Nuclear engineering
• الوصول للمادة أونلاين: http://eprints.utm.my/id/eprint/29481/; http://dx.doi.org/10.1063/1.3554623
• المؤسسة: Universiti Teknologi Malaysia

The ballistic mobility degradation is shown to originate from nonstationary (transient) transport in response to the ohmic electric field. The source and drain reservoirs launch electrons into the channel with injection velocity transiting the channel with finite ballisticity defined as the probabil...