Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure

• Main Authors: Sharifabad, Maneea Eizadi, Zainal Abidin, Mastura Shafinaz, Abd. Rahman, Shaharin Fadzli, Hashim, Abdul Manaf, Abdul Rahman, Abdul Rahim, Omar, Nurul Afzan, Osman, Mohd. Nizam, Qindeel, Rabia
• Format: Article
• Published: Penerbit Universiti Kebangsaan Malaysia 2011
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/29685/; http://www.ukm.my/jsm/english_journals/vol40num3_2011/vol40num3_2011pg267-273.html
• Institution: Universiti Teknologi Malaysia

Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristic...