Germanium growth in low dimensions based on relaxed-porous silicon by using a simple way of electrochemical deposition

• Main Authors: Jawad, M. J., Hashim, M. R., Ali, N. K.
• Format: Article
• Language: English
• Published: 2012
• Subjects: QD Chemistry
• Online Access: http://eprints.utm.my/id/eprint/47032/1/JawadMJ2012_GermaniumGrowthinLowDimensions.pdf; http://eprints.utm.my/id/eprint/47032/; http://www.electrochemsci.org/papers/vol7/71010244.pdf; https://www.researchgate.net/publication/279622313_Germanium_Growth_in_Low_Dimensions_Based_on_Relaxed-Porous_Silicon_by_Using_A_Simple_Way_of_Electrochemical_Deposition
• Institution: Universiti Teknologi Malaysia

Porous silicon (PS) technology was used to grow Ge micro-flower on the surface of Si substrates with rough morphology. Low dimensions nanorods were also fabricated directly on the Si substrates through Ge deposition using a simple and low-cost of electrodeposition method for comparison. The characte...