Growth of Ge/Si(100) nanostructures by radio-frequency magnetron sputtering: the role of annealing temperature
Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600°C, 700°C and 800°C for 2 min at nitrogen ambient pressure. Atomic force micro...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
IOP Publishing
2012
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/47040/ http://iopscience.iop.org/article/10.1088/0256-307X/29/4/048101/meta |
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| Institution: | Universiti Teknologi Malaysia |