Effect of pulse number on dopant activation in silicon during shallow p+/n junction formation by non-melt excimer laser annealing

• Main Authors: Aid, Siti Rahmah, Hamzah, Azura, Ambran, Sumiaty, Matsumoto, Satoru, Johari, Zaharah, Fuse, Genshu
• Format: Conference or Workshop Item
• Published: 2015
• Subjects: TJ Mechanical engineering and machinery
• Online Access: http://eprints.utm.my/id/eprint/60593/; http://www.academic.net/show-9-81-1.html
• Institution: Universiti Teknologi Malaysia

Shallow p+/n junctions were formed using Ge-PAI and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nano second non-melt excimer laser annealing and rapid thermal annealing. The effect of laser pulse number on dopant activation and regrowth of a-Si layer are disc...