Effect of pulse number on dopant activation in silicon during shallow p+/n junction formation by non-melt excimer laser annealing
Shallow p+/n junctions were formed using Ge-PAI and low-energy/high-dose boron-ion implantation, followed by thermal annealing involving nano second non-melt excimer laser annealing and rapid thermal annealing. The effect of laser pulse number on dopant activation and regrowth of a-Si layer are disc...
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Main Authors: | , , , , , |
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Format: | Conference or Workshop Item |
Published: |
2015
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Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/60593/ http://www.academic.net/show-9-81-1.html |
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Institution: | Universiti Teknologi Malaysia |