Structure and electrical characterization of gallium arsenide nanowires with different V/III ratio growth parameters
Gallium arsenide (GaAs) nanowires were grown vertically on GaAs(111)B substrate by gold-assisted using metal-organic chemical vapour deposition. Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Amer Inst Physics
2014
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/62697/ https://dx.doi.org/10.1063/1.4866956 |
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| Institution: | Universiti Teknologi Malaysia |
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