Preparation and Characterization of New Oxide Ion Conductors in Bi2O3-As2O5 System

• Main Authors: Lee, S. L., Lee, C. K., Sinclair, D. C., Chong, F. K., Halim, S. A., Yap, T.
• Format: Article
• Language: English
• Published: Institut Kimia Malaysia 2005
• Subjects: QD Chemistry
• Online Access: http://eprints.utm.my/id/eprint/6329/1/paper_Lee_malaysian_journal2005.pdf; http://eprints.utm.my/id/eprint/6329/; http://www.ikm.org.my/downloads/JournalPDFs/MJC7_001_010_LeeChnoongKheng.pdf
• Institution: Universiti Teknologi Malaysia

Materials in xBi2O3-As2O5 binary system: 1 < x < 7, were prepared by solid state reaction. XRD shows that single phase materials were formed when x = 5, 5.5, 5.667, 5.75, 6 and 7. The symmetry and space group of the materials were determined. Compositions with 5 < x < 6.25 are solid solutions. Electrical properties of the single phase materials were studied using ac impedance spectroscopy at a frequency range of 10 Hz to 13 MHz. These materials are thermally stable and appear to be oxide ion conductors. Highest conductivity was obtained in Bi23As4O44.5 with s value of 5.66 x 10-5 ohm-1 cm-1, Ea = 0.72 eV at 300oC.