The electronic and transport properties of defective bilayer graphene nanoribbon

This paper reports the atomistic simulation of AA and AB stacking bilayer graphene nanoribbon (BGNR) incorporated vacancy defect. The vacancy defects include single vacancy (SV), stone wales (SW), divacancy (DV) and 57775 located in BGNR layers. Through simulation, it is demonstrated the SW defect l...

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Bibliographic Details
Main Authors: Johari, Zaharah, Auzar, Zuriana, Alias, Nurul Ezaila
Format: Article
Published: American Scientific Publishers 2017
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Online Access:http://eprints.utm.my/id/eprint/66278/
https://doi.org/10.1166/jno.2017.1981
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Institution: Universiti Teknologi Malaysia