Effect of methane flow rate to SiC thin films morphology deposited by VHF-PECVD

• Main Authors: Albert Alim, Emilly, Ismail, Abd. Khamim, Omar, Muhammad Firdaus
• Format: Conference or Workshop Item
• Published: ICAMN 2016 2016
• Subjects: Q Science
• Online Access: http://eprints.utm.my/id/eprint/67080/; http://conference.city/conference.php?e_id=117596
• Institution: Universiti Teknologi Malaysia

Silicon carbide (SiC) thin films have been grown in a very high frequency-plasma enhanced chemical vapour deposition (VHF-PECVD) system designed and developed in our laboratory. Silane (SiH4) and methane (CH4) were used as precursor gases. The effect of methane flow rate on the structural and morphology of the deposited SiC thin films were investigated. Raman spectroscopy revealed that the existence of crystal structure in the deposited films with SiC (TO) peak shifted towards lower wavenumbers as CH4 flow rate is increased. The deposition rate of SiC thin films is found to be higher than 13 nm/min. At CH4 flow rate, the deposited films transform from layer-island to layer-layer mechanisms when CH4 flow rate was increased.