Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4
The thermal effect on stimulated emission cross section of 914 nm (R 2 →Z 5 ) emission of 4 F 3/2 → 4 I 9/2 transition in Nd:YVO 4 was investigated. The gain medium temperature was stabilized via thermoelectric cooler which controlled in the range of - 3 o C to 60 o C. T...
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my.utm.683742017-11-20T08:52:08Z http://eprints.utm.my/id/eprint/68374/ Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 Krishnan, Ganesan Bidin, Noriah Q Science The thermal effect on stimulated emission cross section of 914 nm (R 2 →Z 5 ) emission of 4 F 3/2 → 4 I 9/2 transition in Nd:YVO 4 was investigated. The gain medium temperature was stabilized via thermoelectric cooler which controlled in the range of - 3 o C to 60 o C. The emi ssion spectrum was fitted using Lorentzian function to reveal an accurate linewidth. The stimulated emission cross section was estimated using Füchtbauer – Ladenburg Equation. It is yield that the peak stimulated emission is inversely proportional to temperature with a slope of - 1.39×10 - 22 cm 2 o C - 1 . The les s photon - phonon interactions in the crystal field at the lower temperature inducing narrow linewidth of transition line 914 nm at low temperature. Furthermore, less reabsorption effects at the terminal level allows the increases stimulated emission cross section in low temperature operation. Laser Center 2016-01-05 Article PeerReviewed Krishnan, Ganesan and Bidin, Noriah (2016) Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4. Buletin Optik, 1 . p. 4. ISSN 2504-8546 http://laser.utm.my/buletinoptik/files/2016/10/201614.pdf |
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Q Science Krishnan, Ganesan Bidin, Noriah Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 |
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The thermal effect on stimulated emission cross section of 914 nm (R 2 →Z 5 ) emission of 4 F 3/2 → 4 I 9/2 transition in Nd:YVO 4 was investigated. The gain medium temperature was stabilized via thermoelectric cooler which controlled in the range of - 3 o C to 60 o C. The emi ssion spectrum was fitted using Lorentzian function to reveal an accurate linewidth. The stimulated emission cross section was estimated using Füchtbauer – Ladenburg Equation. It is yield that the peak stimulated emission is inversely proportional to temperature with a slope of - 1.39×10 - 22 cm 2 o C - 1 . The les s photon - phonon interactions in the crystal field at the lower temperature inducing narrow linewidth of transition line 914 nm at low temperature. Furthermore, less reabsorption effects at the terminal level allows the increases stimulated emission cross section in low temperature operation. |
format |
Article |
author |
Krishnan, Ganesan Bidin, Noriah |
author_facet |
Krishnan, Ganesan Bidin, Noriah |
author_sort |
Krishnan, Ganesan |
title |
Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 |
title_short |
Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 |
title_full |
Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 |
title_fullStr |
Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 |
title_full_unstemmed |
Temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 |
title_sort |
temperature dependence of 914 nm stimulated emission cross section of diode end-pumped nd:yvo4 |
publisher |
Laser Center |
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2016 |
url |
http://eprints.utm.my/id/eprint/68374/ http://laser.utm.my/buletinoptik/files/2016/10/201614.pdf |
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