Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure

We demonstrate the crystallization of the microstrips of electrodeposited amorphous germanium (Ge) on graphene on insulator by rapid melting growth for the first time. Growth of single-crystalline Ge microstrips with (111) orientation was confirmed. The high level of compressive strain was found to...

Full description

Saved in:
Bibliographic Details
Main Authors: Morshed, T., Kai, Y., Matsumura, R., Park, J. H., Chikita, H., Sadoh, T., Hashim, A. M.
Format: Article
Published: Elsevier 2016
Subjects:
Online Access:http://eprints.utm.my/id/eprint/71628/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84955471158&doi=10.1016%2fj.matlet.2016.01.056&partnerID=40&md5=e57d18c3d13a4668342e3c2a4574d06e
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia
id my.utm.71628
record_format eprints
spelling my.utm.716282017-11-20T08:28:24Z http://eprints.utm.my/id/eprint/71628/ Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure Morshed, T. Kai, Y. Matsumura, R. Park, J. H. Chikita, H. Sadoh, T. Hashim, A. M. T Technology (General) We demonstrate the crystallization of the microstrips of electrodeposited amorphous germanium (Ge) on graphene on insulator by rapid melting growth for the first time. Growth of single-crystalline Ge microstrips with (111) orientation was confirmed. The high level of compressive strain was found to be resulted from the intermixing of C atoms from multilayer graphene (MLG) and Ge. Probably the introduction of local C atom into Ge film enhances nucleation of Ge on MLG, which results in (111)-oriented Ge nuclei. Subsequent lateral growth enables crystallization of Ge with (111) orientation on the entire microstrip. The results also indicate that graphene is very useful to suppress the spontaneous nucleation in the melting Ge films and the lattice rotation or misorientation. This novel and innovative technique provides a breakthrough towards the realization of high quality Ge-on-insulator structures to facilitate the next-generation ultra-large-scale integrated circuits (ULSIs) with multifunctionalities. Elsevier 2016 Article PeerReviewed Morshed, T. and Kai, Y. and Matsumura, R. and Park, J. H. and Chikita, H. and Sadoh, T. and Hashim, A. M. (2016) Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure. Materials Letters, 168 . pp. 223-227. ISSN 0167-577X https://www.scopus.com/inward/record.uri?eid=2-s2.0-84955471158&doi=10.1016%2fj.matlet.2016.01.056&partnerID=40&md5=e57d18c3d13a4668342e3c2a4574d06e
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic T Technology (General)
spellingShingle T Technology (General)
Morshed, T.
Kai, Y.
Matsumura, R.
Park, J. H.
Chikita, H.
Sadoh, T.
Hashim, A. M.
Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
description We demonstrate the crystallization of the microstrips of electrodeposited amorphous germanium (Ge) on graphene on insulator by rapid melting growth for the first time. Growth of single-crystalline Ge microstrips with (111) orientation was confirmed. The high level of compressive strain was found to be resulted from the intermixing of C atoms from multilayer graphene (MLG) and Ge. Probably the introduction of local C atom into Ge film enhances nucleation of Ge on MLG, which results in (111)-oriented Ge nuclei. Subsequent lateral growth enables crystallization of Ge with (111) orientation on the entire microstrip. The results also indicate that graphene is very useful to suppress the spontaneous nucleation in the melting Ge films and the lattice rotation or misorientation. This novel and innovative technique provides a breakthrough towards the realization of high quality Ge-on-insulator structures to facilitate the next-generation ultra-large-scale integrated circuits (ULSIs) with multifunctionalities.
format Article
author Morshed, T.
Kai, Y.
Matsumura, R.
Park, J. H.
Chikita, H.
Sadoh, T.
Hashim, A. M.
author_facet Morshed, T.
Kai, Y.
Matsumura, R.
Park, J. H.
Chikita, H.
Sadoh, T.
Hashim, A. M.
author_sort Morshed, T.
title Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
title_short Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
title_full Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
title_fullStr Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
title_full_unstemmed Formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
title_sort formation of germanium (111) on graphene on insulator by rapid melting growth for novel germanium-on-insulator structure
publisher Elsevier
publishDate 2016
url http://eprints.utm.my/id/eprint/71628/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84955471158&doi=10.1016%2fj.matlet.2016.01.056&partnerID=40&md5=e57d18c3d13a4668342e3c2a4574d06e
_version_ 1643656236079513600