Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects

• Main Authors: Hamzah, A., Hamid, F. A., Ismail, R.
• Format: Article
• Published: Institute of Physics Publishing 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/71902/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84997207377&doi=10.1088%2f0268-1242%2f31%2f12%2f125020&partnerID=40&md5=4edc43c1a67b7d33599eca63daf56f54
• Institution: Universiti Teknologi Malaysia

An explicit solution for long-channel surrounding-gate (SRG) MOSFETs is presented from intrinsic to heavily doped body including the effects of interface traps and fixed oxide charges. The solution is based on the core SRGMOSFETs model of the Unified Charge Control Model (UCCM) for heavily doped con...