Electrical behavior of nanocrystalline graphite/p-Si Schottky diode

• Main Authors: Sultan, S. M., Pu, S. H., Fishlock, S. J., Wah, L. H., Chong, H. M. H., McBride, J. W.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/72962/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-85006944042&doi=10.1109%2fNANO.2016.7751379&partnerID=40&md5=dd5cb43cb221032921cf4f4d3bf60374
• Institution: Universiti Teknologi Malaysia

The electrical characteristics of nanocrystalline graphite (NCG) on p-type Si Schottky diodes were investigated. The NCG/p-Si Schottky diodes were fabricated on a 6-inch wafer by metal-free catalyst plasma enhanced chemical vapour deposition (PECVD) and photolithography pattern transfer method. The NCG film consists of nanoscale grains of ∼35 nm in size. The NCG/p-Si Schottky diode shows rectifying behavior with Schottky barrier height of 0.58 eV. This result in addition to nanosized grains can be exploited towards various chemical and gas sensor applications.