Selective aspect ratio of CNTs based on annealing temperature by TCVD method

Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicat...

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Main Authors: Yousefi, A. T., Mahmood, M. R., Ikeda, S.
Format: Conference or Workshop Item
Published: American Institute of Physics Inc. 2016
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Online Access:http://eprints.utm.my/id/eprint/73165/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984587038&doi=10.1063%2f1.4948855&partnerID=40&md5=25090315c5a597011560083a6c609bb5
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Institution: Universiti Teknologi Malaysia
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spelling my.utm.731652017-11-20T08:33:48Z http://eprints.utm.my/id/eprint/73165/ Selective aspect ratio of CNTs based on annealing temperature by TCVD method Yousefi, A. T. Mahmood, M. R. Ikeda, S. T Technology (General) Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature. American Institute of Physics Inc. 2016 Conference or Workshop Item PeerReviewed Yousefi, A. T. and Mahmood, M. R. and Ikeda, S. (2016) Selective aspect ratio of CNTs based on annealing temperature by TCVD method. In: International Conference on Nano-Electronic Technology Devices and Materials 2015, IC-NET 2015, 27 February 2015 through 2 March 2015, Selangor; Malaysia. https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984587038&doi=10.1063%2f1.4948855&partnerID=40&md5=25090315c5a597011560083a6c609bb5
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic T Technology (General)
spellingShingle T Technology (General)
Yousefi, A. T.
Mahmood, M. R.
Ikeda, S.
Selective aspect ratio of CNTs based on annealing temperature by TCVD method
description Various aspect ratios of CNTs reported based on alteration of annealing temperature using thermal-chemical vapor deposition (TCVD) method. Also the growth dependent and independent parameters of the carbon nanotube (CNTs) array were studied as a function of synthesis method. The FESEM images indicate that the nanotubes are approximately perpendicular to the surface of the silicon substrate and form carbon nanotubes in different aspect ratios according to the applied annealing temperature. Furthermore, due to the optimized results it can be observed that, the mechanism of the CNTs growth is still present in the annealing step as well as deposition process and the most CNTs with crystalline aspect, produced in the annealing temperature, which was optimized at 700 - 900 C. This result demonstrates that the growth rate, mass production, diameter, density, and crystallinity of CNT can be controlled by the annealing temperature.
format Conference or Workshop Item
author Yousefi, A. T.
Mahmood, M. R.
Ikeda, S.
author_facet Yousefi, A. T.
Mahmood, M. R.
Ikeda, S.
author_sort Yousefi, A. T.
title Selective aspect ratio of CNTs based on annealing temperature by TCVD method
title_short Selective aspect ratio of CNTs based on annealing temperature by TCVD method
title_full Selective aspect ratio of CNTs based on annealing temperature by TCVD method
title_fullStr Selective aspect ratio of CNTs based on annealing temperature by TCVD method
title_full_unstemmed Selective aspect ratio of CNTs based on annealing temperature by TCVD method
title_sort selective aspect ratio of cnts based on annealing temperature by tcvd method
publisher American Institute of Physics Inc.
publishDate 2016
url http://eprints.utm.my/id/eprint/73165/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984587038&doi=10.1063%2f1.4948855&partnerID=40&md5=25090315c5a597011560083a6c609bb5
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