SiC power devices and applications in quasi-Z-source converters/inverters

• Main Authors: Li, M., Abu-Rub, H., Liu, Y., Ge, B., Salam, Z.
• Format: Conference or Workshop Item
• Published: Institute of Electrical and Electronics Engineers Inc. 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/73423/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84964322311&doi=10.1109%2fCENCON.2015.7409564&partnerID=40&md5=08d34a3c949de36bbcf56d741f1d2892
• Institution: Universiti Teknologi Malaysia

The wide band-gap Silicon Carbide (SiC) material made power semiconductor devices have attracted increasing attentions in modern power electronics applications. They are able to not only provide wonderful performance of higher switching frequency, higher power, higher voltages, and higher junction t...