The role of silane gas flow rate on PECVD-assisted fabrication of silicon nanowires

• Main Authors: Hamidinezhad, H., Ashkarran, A. A., Abdul-Malek, Z.
• Format: Article
• Published: Springer Verlag 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.utm.my/id/eprint/73836/; https://www.scopus.com/inward/record.uri?eid=2-s2.0-84959087195&doi=10.1007%2fs00339-016-9713-7&partnerID=40&md5=40b7c393f0775fdaffd06012ed29d65c
• Institution: Universiti Teknologi Malaysia

Silicon (Si) core–shell nanowires (NWs) were successfully prepared by very high frequency plasma-enhanced chemical vapor deposition technique, and the effect of silane (SiH4) gas flow rates on physicochemical properties of silicon NWs was investigated. Field emission scanning electron microscopy (FE...