Computational modeling and characterization of X-Bi (X = B, Al, Ga, In) compounds: Prospective optoelectronic materials for infrared/near infra applications

Computational modeling and characterization of X-Bi (X = B, Al, Ga, In) compounds: Prospective optoelectronic materials for infrared/near infra applications

III-V compounds containing heavy Bi anion are distinguished from remaining III-V family in terms of their narrower electronic energy gap and potential application for infrared/near infra devices. In the present work, modeling of X-Bi (X = B, Al, Ga and In) compounds and the investigations pertaining...

Full description

Saved in:
Bibliographic Details
Main Authors: Abdul Rahim, N. A., Ahmed, R., Ul Haq, B., Mohamad, M., Shaari, A., Ali, N., Goumri-Said, S.
Format: Article
Published: Elsevier 2016
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/73851/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84951795325&doi=10.1016%2fj.commatsci.2015.11.043&partnerID=40&md5=10cc9d0af58f2b04fb76f4804c00ab96
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Teknologi Malaysia

Internet

http://eprints.utm.my/id/eprint/73851/
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84951795325&doi=10.1016%2fj.commatsci.2015.11.043&partnerID=40&md5=10cc9d0af58f2b04fb76f4804c00ab96

Similar Items